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Phase transitions at zero magnetic field in Si/SiGe quantum wells

โœ Scribed by M. D'Iorio; J. Lam; D. Brown; H. Lafontaine


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
114 KB
Volume
2
Category
Article
ISSN
1386-9477

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โœฆ Synopsis


A study of the zero magnetic field metal-insulator transition in SiGe quantum well structures and its associated phase diagram reveals the occurrence of two quantum phase transitions in the insulating regime as a function of temperature and carrier density. This is observed as a rapid fall of the resistivity below 400 mK in the insulating phase, followed below 110 mK with a partial recovery and plateau of the resistivity with temperature. A critical carrier density is associated with each one of these transitions, one being 2.2;10 cm\ and the other being 1.8;10 cm. In this work, we explore the nature of these transitions in terms of collective and single-particle phenomena.


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