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Electric and magnetic field fluctuations in modulation doped Si/Ge quantum wells

✍ Scribed by W Jantsch; Z Wilamowski; N Sandersfeld; F Schäffler

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
86 KB
Volume
6
Category
Article
ISSN
1386-9477

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The luminescence of n-type modulation doped GaAs/GaAlAs single quantum well structures has been used to probe the relaxation processes in the presence of quasi two dimensional electron gas under high magnetic fields. It was found that the magnetic field induced modulation of the Landau levels separa