A systematic study was carried out to investigate the distribution of sulfur (S) in CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) absorbers which were exposed to an H 2 S atmosphere at elevated temperature. Results demonstrated that S diusion into CIS layers was a strong function of the original stoichiom
Phase identification and XPS studies of Cu(In,Ga)Se2 thin films
✍ Scribed by C. Calderón; P. Bartolo-Pérez; O. Rodríguez; G. Gordillo
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 305 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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✦ Synopsis
In this paper we present results concerning the effect of preparation conditions on the surface chemistry and crystalline phase of Cu(In,Ga)Se 2 (CIGS) thin films grown by a chemical reaction of the precursor species in two and three stage processes. The CIGS samples were studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. It was found that the bulk of the samples grown in a three stage process contains mainly the CIGS phase; however, secondary phases like In 2 Se 3 , Cu 2 Se and In 2 O were additionally identified at the surface of CIGS samples grown in two stages.
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