Phase development and crystallization of CuAlO2 thin films prepared by pulsed laser deposition

✍ Scribed by Jong-Chul Lee; Se-Young Um; Young-Woo Heo; Joon-Hyung Lee; Jeong-Joo Kim

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 906 KB
• Volume: 30
• Category: Article
• ISSN: 0955-2219
• DOI: 10.1016/j.jeurceramsoc.2009.05.025

✦ Synopsis

A polycrystalline CuAlO 2 single-phase target was fabricated by the conventional solid-state reaction route using Cu 2 O and Al 2 O 3 . Thin films of CuAlO 2 were deposited by a pulsed laser deposition process on sapphire substrates at different temperatures. Then, post-annealing was followed at different conditions, and the phase development process of the films was examined. As grown thin films in the temperature range of 450-650 • C were amorphous. The c-axis oriented single phase of CuAlO 2 thin films were obtained when the films were post-annealed at 1100 • C in air after growing at 650 • C. Phi-scan of the film clearly showed 12 peaks, each of which are positioned at intervals of 30 • . This is thought to be caused by the rhombohedral structured CuAlO 2 thin film growing in the states of 30 • tilt during the annealing process. Hall effect analysis of the film was carried out.