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Phase composition of films in a Bi-S system and formation of Bi2S3films with different substructures

✍ Scribed by G. M. Akhmedov


Book ID
111443953
Publisher
Springer
Year
2008
Tongue
English
Weight
158 KB
Volume
42
Category
Article
ISSN
1063-7826

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Structural and Electrical Properties of
✍ R.SuΓ‘rez Parra; P.J. George; A.E. JimΓ©nez-Gonzalez; L. BaΓ±os; P.K. Nair πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 321 KB

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In