✦ LIBER ✦

Performances of a P-i-N type semiconductor detector at low temperatures

✍ Scribed by G. Grégoires; J. Heughebaert; G. Lema⌝tres; J. Oostens; L. Van Gerven

Publisher: Elsevier Science
Year: 1964
Weight: 350 KB
Volume: 28
Category: Article
ISSN: 0029-554X
DOI: 10.1016/0029-554x(64)90449-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The effect of charge trapping on the spe

The effect of charge trapping on the spectrometer performance of p-i-n semiconductor detectors

✍ T.A. McMath; M. Martini 📂 Article 📅 1970 🏛 Elsevier Science ⚖ 607 KB

Thermal conductivity and thermal EMF of

Thermal conductivity and thermal EMF of n-type indium phosphide at low temperatures

✍ S.A. Aliev; A. Ja. Nashel'ski; S.S. Shalit 📂 Article 📅 1965 🏛 Elsevier Science 🌐 English ⚖ 139 KB

Application of germanium p-i-n detectors

Application of germanium p-i-n detectors stable at room temperature in nondispersion X-ray analysis

✍ S.M. Ryvkin; D.A. Goganov; A.N. Zhukovsky; N.I. Komyak; R.I. Plotnikov; N.B. Str 📂 Article 📅 1971 🏛 Elsevier Science ⚖ 296 KB

Experimental behavior of a pyroelectric

Experimental behavior of a pyroelectric detector at low temperature

✍ F. Bordoni; P. Carelli; I. Modena; G.L. Romani 📂 Article 📅 1979 🏛 Elsevier Science ⚖ 408 KB

Anomalous magneto-transport properties o

Anomalous magneto-transport properties of p-type germanium inversion layers at very low temperatures

✍ G. Remenyi; S. Uchida; G. Landwehr; A. Briggs 📂 Article 📅 1984 🏛 Elsevier Science ⚖ 39 KB

A p-Type Amorphous Oxide Semiconductor a

A p-Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

✍ S. Narushima; H. Mizoguchi; K. Shimizu; K. Ueda; H. Ohta; M. Hirano; T. Kamiya; 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 200 KB 👁 1 views

**Oxide electronics**, which together with amorphous semiconductors could become a rapid‐growth field, have come a step closer with the first report of a p‐type amorphous oxide semiconductor, ZnO·Rh~2~O~3~. The thin‐film deposition of this material at room temperature and the fabrication of p–n hete