𝔖 Bobbio Scriptorium

✦ LIBER ✦

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

✍ Scribed by Luisier, Mathieu; Klimeck, Gerhard

Book ID: 120939820
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 546 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3140505

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

TCAD-Based Statistical Analysis and Mode

TCAD-Based Statistical Analysis and Modeling of Gate Line-Edge Roughness Effect on Nanoscale MOS Transistor Performance and Scaling

✍ Kim, S.-D.; Wada, H.; Woo, J.C.S. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 644 KB

[IEEE 13th International Workshop on Com

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study

✍ Leong, Zuan-Yi; Lam, Kai-Tak; Liang, Gengchiau 📂 Article 📅 2009 🏛 IEEE ⚖ 607 KB