✦ LIBER ✦
TCAD-Based Statistical Analysis and Modeling of Gate Line-Edge Roughness Effect on Nanoscale MOS Transistor Performance and Scaling
✍ Scribed by Kim, S.-D.; Wada, H.; Woo, J.C.S.
- Book ID
- 120824827
- Publisher
- IEEE
- Year
- 2004
- Tongue
- English
- Weight
- 644 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0894-6507
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