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Peculiarities of the Crystallization of Oriented Semiconductor Layers on Non-Orienting Substrates

✍ Scribed by Prof. Dr. L. N. Alexandrov; E. A. Klimenko; Dr. A. G. Klimenko

Publisher
John Wiley and Sons
Year
1969
Tongue
English
Weight
322 KB
Volume
4
Category
Article
ISSN
0232-1300

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## Abstract A dislocation structure of Si layers crystallized from a floating grain on quartz glass and mullite ceramics substrates has been investigated by transmission electron microscopy (TEM) including the high‐voltage one. The effect of the layer orientation on the crystallographic features of