Peculiarities of jumping electroconductivity in bismuth oxide films

✍ Scribed by Yu.A. Vidadi; Ya.Yu. Guseinov; V.E. Bagiev; T.Yu. Rafiev

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 203 KB
• Volume: 173
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(91)90473-r

✦ Synopsis

The electrical properties of bismuth oxide films with direct and alternating current have been studied. A charge carrier transfer is shown to be dominant in these films both at low temperatures and at high frequencies due to the carrier jumps between the localized states with the energy near the Fermi level N(EF). The value of N(Er) at the localization radius a ~ = 8 A,, the angular coefficient in Mott's law for jumping conductivity B = 93 K ~/4 and the average length of jumping at 230 K, R = 70 A, have been calculated by two independent methods for 6-Bi20 3 films.