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Memory switching in films of oxide glasses containing bismuth


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
146 KB
Volume
26
Category
Article
ISSN
0042-207X

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The electrical properties of bismuth oxide films with direct and alternating current have been studied. A charge carrier transfer is shown to be dominant in these films both at low temperatures and at high frequencies due to the carrier jumps between the localized states with the energy near the Fer