✦ LIBER ✦

Passivation of deep electronic states of partial dislocations in GaAs: A theoretical study

✍ Scribed by Zhang, Lixin; McMahon, W. E.; Wei, Su-Huai

Book ID: 118171899
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 629 KB
Volume: 96
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3364140

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nucleation of partial dislocations from

Nucleation of partial dislocations from a free surface: Theoretical study

✍ Brochard, S.; Junqua, N.; Grilhé, J. 📂 Article 📅 1998 🏛 Taylor and Francis Group 🌐 English ⚖ 574 KB

Characterisation of deep electron states

Characterisation of deep electron states in LEC grown GaAs material

✍ Hashizume, T; Nagabuchi, H 📂 Article 📅 1989 🏛 Institute of Physics 🌐 English ⚖ 784 KB

An electron-beam-induced current study o

An electron-beam-induced current study of dislocations in GaAs

✍ S.A. Galloway; P.R. Wilshaw; A. Konkol 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 782 KB

A theoretical study on lower electronic

A theoretical study on lower electronic states of CoN

✍ Takayoshi Yamaki; Masahiro Sekiya; Kiyoshi Tanaka 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 184 KB

In order to identify the ground state of CoN, we carried out calculations of multi-reference single and double excitation configuration interaction with Davidson-type correction and multi-reference coupled pair approximation (MRCPA). MRCPA predicts that 1 R þ is the ground state of CoN. The 5 D stat

Electronic spectrum of 17 electronic sta

Electronic spectrum of 17 electronic states of BN molecule: A theoretical study

✍ Deheng Shi; Wei Xing; Hui Liu; Jinfeng Sun; Zunlue Zhu; Yufang Liu 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 473 KB

Origin of HfO2/GaAs interface states and

Origin of HfO2/GaAs interface states and interface passivation: A first principles study

✍ Weichao Wang; Ka Xiong; Geunsik Lee; Min Huang; Robert M. Wallace; Kyeongjae Cho 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 739 KB

a b s t r a c t First principles calculations of HfO 2 /GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO 2 and GaAs surfaces. We find that a model neutral interface (HfO 2 and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell)