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Passivation effects on reactive-ion-etch-formed n-on-p junctions in HgCdTe

✍ Scribed by J. K. White; J. Antoszewski; R. Pal; C. A. Musca; J. M. Dell; L. Faraone; J. Piotrowski

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Contactless junction contrast of HgCdTe

✍ E. A. Gluszak; S. Hinckley 📂 Article 📅 2001 🏛 Springer US 🌐 English ⚖ 755 KB

Dependency of p-n junction depth on ion

✍ H. Ebe; M. Tanaka; Y. Miyamoto 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 260 KB

Passivation of HgCdTe p-n diode junction

✍ S. Y. An; J. S. Kim; D. W. Seo; S. H. Suh 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 293 KB

Transport properties of reactive-ion-etc

✍ T. Nguyen; J. Antoszewski; C. A. Musca; D. A. Redfern; J. M. Dell; L. Faraone 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 430 KB

Planar p-on-n HgCdTe heterojunction mid-

✍ C. A. Musca; J. Antoszewski; J. M. Dell; L. Faraone; S. Terterian 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 344 KB

Surface leakage current analysis of ion

✍ Young-Ho Kim; Soo-Ho Bae; Hee Chul Lee; Choong Ki Kim 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 421 KB