Passivation effect of (nh4)2sx treatment on gaas surface before photo-resist and o2 processes

✍ Scribed by Kyung-Soo Suh; Jong-Lam Lee; Hyung-Ho Park; Chan-Ho Kim; Jae-jin Lee; Kee-Soo Nam

• Book ID: 103955163
• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 430 KB
• Volume: 37
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(95)01480-2

✦ Synopsis

Surface'properties of GaAs passivated with (NH&Sx solution have been analyzed in GaAs wafer and photo-resist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. h?Ieanwhile, the compositions of gallium and arsenic keep almost constant, even aftet oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-0 bond is thermally stable, but the As-S bond unstable,