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Partial dislocations and stacking faults in cubic SiC

โœ Scribed by U. Kaiser; I. I. Khodos; M. N. Kovalchuk; W. Richter


Book ID
110128648
Publisher
SP MAIK Nauka/Interperiodica
Year
2001
Tongue
English
Weight
639 KB
Volume
46
Category
Article
ISSN
1063-7745

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## Abstract We present experimental and theoretical results on extended defects of hexagonal GaN grown by metal organic vapour deposition (MOCVD). Transmission electron microscopy (TEM) measurements indicate the presence of 3โ€‰nm wide type I~1~ stacking faults (SFs) related to the MOCVD growth, and