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Partial crystallization of silicon by high intensity laser irradiation

✍ Scribed by Hirozumi Azuma; Akito Sagisaka; Hiroyuki Daido; Isao Ito; Hiroaki Kadoura; Nobuo Kamiya; Tadashi Ito; Akihiko Nishimura; Jinglong Ma; Michiaki Mori; Satoshi Orimo; Koichi Ogura


Book ID
108063960
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
354 KB
Volume
255
Category
Article
ISSN
0169-4332

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In an effort to study the nature of the damage processes which occur when detectors for visible light are irradiated with high-power laser beams, bulk (111) n-type (P doped) silicon samples were submitted to high intensity 580 nm dye laser pulses for microsecond duration and the induced morphologica