Morphological and electrical modifications in silicon submitted to high-intensity laser irradiation
✍ Scribed by Olivier Muller; René Joecklé
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 946 KB
- Volume
- 168
- Category
- Article
- ISSN
- 0921-5093
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✦ Synopsis
In an effort to study the nature of the damage processes which occur when detectors for visible light are irradiated with high-power laser beams, bulk (111) n-type (P doped) silicon samples were submitted to high intensity 580 nm dye laser pulses for microsecond duration and the induced morphological (cracks, melting) as well as electrical (sheet resistance) modifications were investigated. The irradiation was either in a variable diameter focused mode, or a uniform power density beam. The uniform illumination mode allows one to obtain more precise values for the morphological degradation occurring with increasing fluence: from the first appearance of a white coating (over 1.7 J cm-2) to the progressive formation of cracks (from 5.5 J cm -2 to melting) before melting occurs (at 10.7 J cm-2). A detailed study of the resistivity as a function of fluence is reported, using the latter optical regime, and it is shown that melting is accompanied by a strong increase in sheet resistance (from 50 to 180 kQ ).