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Parity effects in superconducting SET transistors

✍ Scribed by Gerd Schön; Jens Siewert; Andrei D. Zaikin


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
497 KB
Volume
203
Category
Article
ISSN
0921-4526

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✦ Synopsis


Single electron tunneling into small superconducting islands is sensitive to the gap energy of the excitations created in the process and, hence, depends on the parity of the electron number in the island. We study these effects by analyzing the kinetics of the system. The tunneling of a single electron, the "odd" one, dominates at low temperatures since in this process the excitation energy can be regained, while the competing regular processes are exponentially suppressed. We discuss the influence of parity effects on single electron tunneling and Andreev reflection in superconducting transistors and find rich structures in the I-V characteristics, which compare well with recent experiments.


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Parity effect in a small superconducting
✍ D.V. Averin; Yuli V. Nazarov 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 349 KB

We consider the thermodynamics of the parity effect in a superconducting island. It is shown that the contribution of the order parameter fluctuations to the odd--even energy difference of the island is small. This confirms the mean-field (BCS) picture of the parity effect.