𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Incremental stress effects in transistors

✍ Scribed by R.H. Mattson; L.D. Yau; J.R. DuBois

Publisher
Elsevier Science
Year
1967
Tongue
English
Weight
653 KB
Volume
10
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Parity effects in superconducting SET tr
Parity effects in superconducting SET transistors
✍ Gerd Schön; Jens Siewert; Andrei D. Zaikin 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 497 KB

Single electron tunneling into small superconducting islands is sensitive to the gap energy of the excitations created in the process and, hence, depends on the parity of the electron number in the island. We study these effects by analyzing the kinetics of the system. The tunneling of a single elec

Incremental shakedown analysis in the ca
Incremental shakedown analysis in the case of thermal effects
✍ M. Kleiber; J. A. König 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 317 KB

## Abstract A new method of performing the shakedown analysis of structures subjected to variable repeated loads and temperature fields is presented. The method employs the standard incremental elastic‐plastic finite element algorithm and is based upon a cyclic repetition of piecewise‐proportional

Incremental analysis of time-dependent e
Incremental analysis of time-dependent effects in composite structures
✍ Bruno Jurkiewiez; Jean-François Destrebecq; Alain Vergne 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 257 KB

An ecient numerical method is presented, to account for time eects in composite structures. The method is based on the theory of linear viscoelasticity and on the ®nite element method. The global behaviour of structural elements made of several viscoelastic materials (composite beams, layered plates