## Abstract This paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified Shichman–Hodges model, in which the generation current,
Parameters estimation of the d.c. electrothermal model of the bipolar transistor
✍ Scribed by Janusz Zarębski; Krzysztof Górecki
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 162 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0894-3370
- DOI
- 10.1002/jnm.449
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✦ Synopsis
Abstract
This paper concerns the problems of the parameter values estimation of d.c. electrothermal model of the BJT formulated for circuit analysis with SPICE. In this case, PARTS software available in SPICE cannot be used. In the paper, a new estimation algorithm for d.c. electrothermal model of the BJT is proposed. The form of the electrothermal BJT model is also presented. The estimation algorithm implemented into the computer‐controlled measurement set allows one to derive the values of the parameters automatically after the measurements of the selected isothermal characteristics and proper calculations. Copyright © 2002 John Wiley & Sons, Ltd.
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