Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film

✍ Scribed by Yuan Wen; Guiguang Xiong; Ququan Wang; Daijian Chen

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 218 KB
• Volume: 370
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.09.013

✦ Synopsis

The optical nonlinearities of an InGaN/GaN multiple quantum well (MQW) and a GaN film were experimentally investigated by using femtosecond Z-scan method in this paper. It was observed that the InGaN/GaN MQW displays a nonlinear saturable absorption (SA) effect and the nonlinear absorption coefficient b was determined to be À5:5 Â 10 3 cm=GW; and the GaN film shows a reverse saturable absorption (RSA) effect and the b is 7:5 Â 10 3 cm=GW. It is also found that the absorption cross sections and quantum confinement effect (QCE) give an influence on the SA of the InGaN/GaN MQW structure.