A set of InGaN/GaN/AlGaN structures with various structure design and InGaN/GaN active region growth technique was grown by MOCVD on sapphire substrates. 300 K lasing under optical pumping with threshold excitation densities of 13.5 and 40 kW/cm 2 and wavelengths of 405 and 435 nm, respectively, wer
โฆ LIBER โฆ
Optical Characterization of InGaN/GaN MQW Structures without In Phase Separation
โ Scribed by B. Monemar; P.P. Paskov; G. Pozina; T. Paskova; J.P. Bergman; M. Iwaya; S. Nitta; H. Amano; I. Akasaki
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 128 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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