Parallel type substrate integrated waveguide Gunn oscillator

✍ Scribed by Cuilin Zhong; Jun Xu; Zhiyuan Yu; Junhong Li

• Book ID: 102517991
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 368 KB
• Volume: 50
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.23710

✦ Synopsis

Abstract

Based on the substrate integrated waveguide (SIW) technology, a parallel‐type Gunn diode oscillator was developed. SIW resonant cavity structure was emphasized. Restrictions on the performance of the oscillators imposed by packaged networks and the self‐characteristic of the Gunn diode devices have been mainly analyzed. This oscillator performance is characterized by a medium level output power of 15.2 dBm, a low phase noise less than −87.8 dBc/Hz@99 kHz, and frequency excursion 59 MHz over temperature range from 15 to 75°C. It has some advantages such as planar structure, low cost, small size, and good temperature‐frequency stability. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2525–2527, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23710