Asymmetrically modulation-doped HgTe quantum wells of (0 0 1) orientation were produced by molecular beam epitaxy. N-type doping was achieved with iodine and p-type doping by the incorporation of nitrogen. At 4.2 K the n-type samples have electron mobilities up to 10 5 cm 2 =Vs, the maximum Hall mob
β¦ LIBER β¦
Parallel dispersion in p-type modulation-doped quantum wells of intermediate thickness
β Scribed by U. Ekenberg
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 376 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0749-6036
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