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p-n junctions on Ga-face GaN grown by NH[sub 3] molecular beam epitaxy with low ideality factors and low reverse currents

✍ Scribed by Hurni, Christophe A.; Bierwagen, Oliver; Lang, Jordan R.; McSkimming, Brian M.; Gallinat, Chad S.; Young, Erin C.; Browne, David A.; Mishra, Umesh K.; Speck, James S.

Book ID: 120208682
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 633 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3521388

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