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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

✍ Scribed by J.D. Murphy; S. Senkader; R.J. Falster; P.R. Wilshaw


Book ID
108215387
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
256 KB
Volume
134
Category
Article
ISSN
0921-5107

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## Abstract Dislocation locking experiments have been used to investigate nitrogen‐doped float‐zone silicon (NFZ‐Si). Experiments on NFZ‐Si with a nitrogen concentration of 2.2 Γ— 10^15^ cm^–3^ were carried out at different annealing temperatures (550–830 Β°C) for different annealing times (0–1500 ho

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