Nitrogen transport in float-zone and Czo
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Murphy, J. D. ;Giannattasio, A. ;Senkader, S. ;Falster, R. J. ;Wilshaw, P. R.
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Article
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2005
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John Wiley and Sons
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English
β 99 KB
## Abstract Dislocation locking experiments have been used to investigate nitrogenβdoped floatβzone silicon (NFZβSi). Experiments on NFZβSi with a nitrogen concentration of 2.2 Γ 10^15^ cm^β3^ were carried out at different annealing temperatures (550β830 Β°C) for different annealing times (0β1500 ho