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Oxygen sinks in reactions of thin bilayer refractory metal films with SiO2 substrates

✍ Scribed by S.Q. Wang; J.W. Mayer


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
964 KB
Volume
202
Category
Article
ISSN
0040-6090

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Analysis of N isotope depth profiles in
✍ N. Matsunami; T. Murase; M. Tazawa; S. Ninad; O. Fukuoka; T. Shimura; M. Sataka; πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 319 KB

We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi