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Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique II. Growth velocity and applied magnetic field transients

โœ Scribed by C.T. Yen; W.A. Tiller


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
704 KB
Volume
118
Category
Article
ISSN
0022-0248

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