๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Oxygen diffusion and reaction at annealed InSb MOS interfaces

โœ Scribed by J. Bregman; Yoram Shapira; Z. Calahorra; LeonardJ. Brillson


Publisher
Elsevier Science
Year
1986
Weight
128 KB
Volume
178
Category
Article
ISSN
0167-2584

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Oxygen Reduction Reaction at Three-Phase
โœ Dr. Ram Subbaraman; Dr. Dusan Strmcnik; Dr. Arvydas P. Paulikas; Dr. Vojislav R. ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 574 KB
Interface diffusion and chemical reactio
โœ Zhu, Yongfa; Yan, Peiyu; Yi, Tao; Cao, Lili; Li, Longtu ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 148 KB ๐Ÿ‘ 2 views

Interface diffusion and chemical reaction between a lead zirconate titanate (PZT) layer and an Si substrate during annealing treatment in N 2 or in a vacuum were studied using AES depth profile and lineshape analysis techniques. The results indicated that annealing treatment in a high vacuum was abl