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Oxygen Atom Abstraction of Hydrogen Chemisorbed on a Silicon Surface

✍ Scribed by Ree, J.; Kim, Y. H.; Shin, H. K.

Book ID
126126707
Publisher
American Chemical Society
Year
2003
Tongue
English
Weight
276 KB
Volume
107
Category
Article
ISSN
1089-5639

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πŸ“œ SIMILAR VOLUMES

Reaction of gas phase atomic oxygen with
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✍ J. Ree; H.K. Shin πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 685 KB

Classical trajectory studies have been carried out for the reaction of gas phase atomic O with H atoms chemisorbed on a corrugated tungsten surface. Most reactive events are found to occur in single-impact collisions on a subpicosecond scale via the Eley-Rideal mechanism producing highly excited OH.

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The initial stage of oxidation of anodized porous silicon (PS) at low temperature (\lesssim208°C) has been investigated using a conventional infrared (IR) spectroscopy technique. After the oxidation in air, four extra IR absorption peaks appeared in the Si-H stretching band (2000∼2300 cm-1). The ori