Initial Oxidation Process of Anodized Po
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Kato, Yoshihisa; Ito, Toshimichi; Hiraki, Akio
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Article
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1988
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Institute of Pure and Applied Physics
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English
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The initial stage of oxidation of anodized porous silicon (PS) at low temperature (\lesssim208ยฐC) has been investigated using a conventional infrared (IR) spectroscopy technique. After the oxidation in air, four extra IR absorption peaks appeared in the Si-H stretching band (2000โผ2300 cm-1). The ori