✦ LIBER ✦

Oxide growth at a Si surface

✍ Scribed by L. Verdi; A. Miotello; R. Kelly

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 502 KB
Volume: 241
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(94)90463-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Protuberance growth at polysilicon surfa

Protuberance growth at polysilicon surfaces during oxidation

✍ Soichi Nadahara; Jun-ichi Shiozawa; Keitaro Imai; Kyoichi Suguro; Kikuo Yamabe 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 437 KB

Oxidation of fatigue fracture surfaces a

Oxidation of fatigue fracture surfaces at low crack growth rates

✍ D. Benoit; R. Namdar-Irani; R. Tixier 📂 Article 📅 1980 🏛 Elsevier Science ⚖ 657 KB

Structural study of Si growth on a Si(11

Structural study of Si growth on a Si(111) 7 × 7 surface

✍ Hitoshi Nakahara; Ayahiko Ichimiya 📂 Article 📅 1991 🏛 Elsevier Science ⚖ 76 KB

Investigating the surface quality and co

Investigating the surface quality and confinement of Si:P at different growth temperatures

✍ Sarah R. McKibbin; Warrick R. Clarke; Michelle Y. Simmons 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 526 KB

Surface oxide layers of Si and Ge nanocr

Surface oxide layers of Si and Ge nanocrystals

✍ S. Hayashi; S. Tanimoto; M. Fujii; K. Yamamoto 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 537 KB

Surface oxide layers for5ed on gas-evaporated Si and Ge microcrystals as small as 1OOA were investigated by means of infrared spectroscopy, high-resolution electron Ficroscopy and X-ray photoemission spectroscopy. It is shown that 20A-thick native oxide layers in the form of SiO, with x=-1.2 are fir

Epitaxial growth mechanism at SB steps o

Epitaxial growth mechanism at SB steps of Si(001) surfaces by photo-induced Si(1D) atoms

✍ Minoru Tsuda; Setsuko Oikawa; Shinji Furukawa 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 421 KB