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Oxidation/Reduction Effects on the Thermoluminescence of?-Al2O3 Single Crystals

✍ Scribed by Moln�r, G. ;Borossay, J. ;Benabdesselam, M. ;Iacconi, P. ;Lapraz, D. ;S�vegh, K. ;V�rtes, A.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
218 KB
Volume
179
Category
Article
ISSN
0031-8965

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Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide