Oxidation of polyethylene implanted with As ions to different extents

✍ Scribed by Vladimír Hnatowicz; Jiří Kvítek; Václav Švorčík; Vladimír Rybka

• Book ID: 103075180
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 294 KB
• Volume: 29
• Category: Article
• ISSN: 0014-3057
• DOI: 10.1016/0014-3057(93)90158-c

✦ Synopsis

Polyethylene (PE) samples implanted with 150keV As + ions to the extents of 5 x 10t3-1 × l0 ts cm -2 were studied using a standard RBS (Rutherford Back Scattering) technique. The measured projected range of As + ions (Rp --120 + 20 rim) is significantly lower than theoretical range of 170 nm calculated using TRIM code for pristine PE, the difference probably being due to structural changes in PE resulting from the ion implantation. The measured range straggling ARF = 60 :t: l0 nm also exceeds the theoretical TRIM value of 33 rim. The profile broadening might be due to the diffusion of the As atoms through the damaged surface layer of PE. Noticeable oxidation of the implanted samples was also observed, with most of the oxygen atoms trapped in the region of maximum radiation defects. The total oxygen content in the sample surface layer and its depth concentration profile depend on the extent of implanted ions. For the highest implanted dose of l × l0 ~s cm -2, the oxygen depth profile exhibits two distinct concentration maxima, the first on the sample surface and the second at a depth close to the expected range of 150 keV As + ions.