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Oxidation of ion implanted silicon carbide

✍ Scribed by A Makhtari; V Raineri; F La Via; G Franzò; F Frisina; L Calcagno


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
133 KB
Volume
4
Category
Article
ISSN
1369-8001

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Defect production and annealing in ion i
✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron