Oxidation kinetics of ZrN thin films
β Scribed by L. Krusin-Elbaum; M. Wittmer
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 312 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
The contact properties of ZrN x on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current-voltage (I-V) and capacitance-voltage (C-V) measurements. The zerobias barrier heights evaluated by I-V were in the
thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order