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Ostwald ripening of end-of-range defects in silicon

✍ Scribed by Bonafos, C.; Mathiot, D.; Claverie, A.

Book ID: 115502821
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 492 KB
Volume: 83
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.367056

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