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Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes

✍ Scribed by Brown, E. R.; Sollner, T. C. L. G.; Parker, C. D.; Goodhue, W. D.; Chen, C. L.


Book ID
118032438
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
717 KB
Volume
55
Category
Article
ISSN
0003-6951

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Effective mass in the barriers of GaAs/A
✍ D. Landheer; G.C. Aers; Z.R. Wasilewski πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 496 KB

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu