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Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy

✍ Scribed by Yu. B. Bolkhovityanov; A. S. Deryabin; A. K. Gutakovskiĭ; M. A. Revenko; L. V. Sokolov

Book ID
111443485
Publisher
Springer
Year
2006
Tongue
English
Weight
297 KB
Volume
40
Category
Article
ISSN
1063-7826

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