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Origin of Superhardness in Icosahedral B12 Materials.

✍ Scribed by Faming Gao; Li Hou; Yunhua He


Publisher
John Wiley and Sons
Year
2004
Weight
9 KB
Volume
35
Category
Article
ISSN
0931-7597

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Ground and Excited States of an Icosahed
✍ M. Fujimori; K. Kimura πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 306 KB

From many experimental studies, a localized intrinsic acceptor level is assumed to exist at about 0.2 eV above the valence band edge in -rhombohedral boron. The acceptor level has been tentatively originated from the unoccupied intracluster bonding level split away from the valence band due to the d