From many experimental studies, a localized intrinsic acceptor level is assumed to exist at about 0.2 eV above the valence band edge in -rhombohedral boron. The acceptor level has been tentatively originated from the unoccupied intracluster bonding level split away from the valence band due to the d
Electronic structure and binding energy of the icosahedral boron cluster b12†
✍ Scribed by G. Bambakidis; R.P. Wagner
- Publisher
- Elsevier Science
- Year
- 1981
- Tongue
- English
- Weight
- 278 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0022-3697
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📜 SIMILAR VOLUMES
The electronic structure of the truncated-icosahedral Cbo cluster ("footballene") is theoretically examined by performing a linear muffin-tin orbitals (LMTO) calculation.
Optical conductivities and dielectric functions derived from the IR-optical reflectivity spectra exhibit clear similarities between icosahedral boron-rich structures and Al-based isosahedral quasicyrstals. This suggests a close qualitative relationship of their electronic structures. Accordingly ico
For -rhombohedral boron and boron carbide, the hitherto best-investigated icoasahedral boron-rich solids, the concentrations of structural defects and electronic gap states are quantitatively correlated. In this way the theoretically determined valence electron de5ciencies are exactly compensated, a
Electron energy-loss spectra of -rhombohedral boron ( -r-B) were obtained from perfect crystalline areas of 180 nm diameter. The onset of the spectral intensity was observed at 2.4 eV (band gap energy). The volume plasmon peak due to the sp valence electrons is at 24.5 eV with a full width at half m
Electron energy-loss spectra of Li-and V-doped -rhombohedral boron ( -r-B) were measured from perfect crystalline areas of 180 nm in diameter. The onset of spectra of Li-doped -r-B was observed at about 1.5 eV, but that of V-doped -r-B was not clearly observed. The volume plasmon peaks of Li-and V-d