Origin of large-amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation

✍ Scribed by Pogany, D.; Chantre, A.; Chroboczek, J. A.; Ghibaudo, G.

• Book ID: 120228256
• Publisher: American Institute of Physics
• Year: 1996
• Tongue: English
• Weight: 372 KB
• Volume: 68
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.116393