Organosilicon deep UV positive resist consisting of poly(p-disilanylenephenylene)

✍ Scribed by Kazuo Nate; Takashi Inoue; Hisashi Sugiyama; Mitsuo Ishikawa

• Publisher: John Wiley and Sons
• Year: 1987
• Tongue: English
• Weight: 762 KB
• Volume: 34
• Category: Article
• ISSN: 0021-8995
• DOI: 10.1002/app.1987.070340709

✦ Synopsis

A new class of positive deep ultraviolet (vv) resists consisting of poly( pdisilanylenepheny1ene)s was developed, in which a disilanylene unit and a phenylene unit are connected alternatively in the polymer main chain. These resists had very high etching resistance against oxygen plasma. The lithographic applications of a double-layer resist system in which the poly(p-disilanylenephenylene) f i l m was used as the top imaging layer were examined. As a reault, very high resolution and high contrast were attained. The double-layer resist technique using organosilicon deep W positive resist appears very promising for lithographic applications.