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Organic thin film transistors with asymmetrically placed source and drain contact

✍ Scribed by Nurul Islam, M.; Mazhari, B.


Book ID
122950711
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
375 KB
Volume
14
Category
Article
ISSN
1566-1199

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The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain