Characterization of polysilicon thin-fil
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M.S. Shieh; Y.J. Lin; C.M. Yu; T.F. Lei
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Article
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2005
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Elsevier Science
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English
β 223 KB
The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain