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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy

✍ Scribed by Lan Jin; Huiying Zhou; Shengchun Qu; Zhanguo Wang

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 861 KB
Volume: 14
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2011.01.009

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