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Ordered growth of germanium dots induced by the strain field of tilt dislocations in molecular bonded silicon (0 0 1) thin films

✍ Scribed by V. Poydenot; R. Dujardin; J.L. Rouvière; A. Barski; J. Mezière; F. Fournel

No coin nor oath required. For personal study only.

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Ordered growth of germanium dots induced by the strain field of tilt dislocations in molecular bonded silicon (0&#xa0;0&#xa0;1) thin films