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Ordered arrays of epitaxial silicon nanowires produced by nanosphere lithography and chemical vapor deposition

✍ Scribed by Damiana Lerose; Mikhael Bechelany; Laetitia Philippe; Johann Michler; Silke Christiansen


Book ID
108166116
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
615 KB
Volume
312
Category
Article
ISSN
0022-0248

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We have carried out photoluminescence measurements of silicon nanowires (SiNWs) obtained by the chemical vapor deposition method with a copper-catalyzed vapor-liquid-solid mechanism. The nanowires have a typical diameter of 200 nm. Spectrum of the as-grown SiNWs exhibits radiative states below the e