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Optoelectronic properties of CdTe/Si heterojunction prepared by pulsed Nd:YAG-laser deposition technique

✍ Scribed by Raid A. Ismail; Khaki I. Hassan; Omar A. Abdulrazaq; Wesam H. Abode


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
147 KB
Volume
10
Category
Article
ISSN
1369-8001

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## Abstract InAs co‐doped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using X‐ray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to invest