</header><div itemprop="description" class="collapsable text"><P><EM>III-Nitride Semiconductor Optoelectronics</EM>covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials grow
Optoelectronic Devices: III Nitrides
โ Scribed by Mohamed Henini, M Razeghi
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Leaves
- 582
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.
The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.
This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
Broad review of optoelectronic applications of III-V nitrides
๐ SIMILAR VOLUMES
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices. <p> Writ