Group III-Nitride Semiconductor Optoelectronics

✍ Scribed by C. Jayant Praharaj

• Publisher: Wiley
• Year: 2024
• Tongue: English
• Leaves: 188
• Category: Library

✦ Table of Contents

Group III-Nitride Semiconductor Optoelectronics
Preface
Contents
1 Introduction
2 Band Structure and Optical Properties of Group III-Nitride Semiconductors
Crystal Symmetry (Wurtzite and Cubic Phases)
Lattice Periodicity and Crystal Hamiltonian
Bloch’s Theorem and Nature of Electron States
Quantum Mechanical Properties Corresponding to Bloch States
Light–Matter Interaction in Semiconductors
Spontaneous and Piezoelectric Polarization
Phonon Spectrum
Scattering Mechanisms
Donors and Deep Acceptors
3 Growth and Doping of Group III-Nitride Devices
Major Epitaxial Growth Methods
In Situ and Implant Doping
Dislocations and Point Defects
Dopant-induced Defects
Substrates and Growth
Gallium Nitride Growth on Silicon Substrates
4 Optical Properties of Low-dimensional Structures in Group III Nitrides
Quantum Wells, Quantum Wires, and Quantum Dots
The k.p Method
Crystal Symmetry and Low-dimensional Structures
Alloy Disorder and Density Functional Theory Electronic Structure Calculation
Deviations from Charge Neutrality and Effect on Electronic Structure
Polarization Engineering Using Quaternaries and Complex Structures
Dislocations in Low-dimensional Structures and Carrier Dynamics
Disorder, Carrier Localization, and Effect on Recombination and Red Shifts
5 Light-emitting Diodes and Lasers
Blue, Green, and Ultraviolet (UV) LEDs
Light-emitting Diode Basic Operating Principles
Blue, Green, and UV Lasers
Blue, Green, and Device Laser Materials – Device Considerations
Nanowire microLEDs
LED Quantum Efficiencies and Laser Threshold Currents in Quantum Wires and Quantum Dots
Auger Recombination and Efficiency Droop in Group III-Nitride LEDs
Dislocations in Low-dimensional Structures and Carrier Dynamics
Disorder, Carrier Localization, and Effect on Recombination and Red Shifts
Staggered Quantum-well InGaN Laser Characteristics
Non-polar Plane Quantum-well InGaN LEDs and Lasers
Semi-polar Plane Quantum-well InGaN LEDs and Lasers
p-Type Ohmic Contacts and Efficiency of LEDs and Lasers
Vertical Cavity Surface Emitting Lasers
Distributed Feedback Lasers
Plasmonic Nanolasers
Indium Gallium Nitride LEDs and Lasers on Si Substrates
6 Inter Sub-band Devices
Quantum Cascade Lasers
Infrared Photodetectors
7 Photodetectors
Ultraviolet Photodetectors
Complex Dielectric Function
Basic Principle of Operation
Metal–Semiconductor–Metal (MSM) Photodetector
Solar-blind Group III-Nitride UV Photodetectors
p-i-n Photodiodes
Schottky Barrier Photodiodes
Heterogenous Photodiodes with Group III Nitrides and Transition Metal Dichalcogenides
Alloy Nitrides and Spectral Response
Photodetectors and Substrate Engineering
8 Photovoltaics and Energy Conversion Devices
Indium Gallium Nitride Material System for Solar Cells
Basic Solar Cell Physics – p-n Junction Solar Cells
Intermediate Band Solar Cells
Substrate Effects on InGaN Solar Cells
Ohmic Contact Effects in p-n and p-i-n InGaN Solar Cells
Plasmonically Enhanced Solar Cells
Solar Concentrating Photovoltaics
Tandem Solar Cells Using Indium Gallium Nitride
Semiconductor Photocatalysis Using InGaN
9 Quantum Photonic Properties of Nitride Semiconductor Devices
Non-classical Light from Group III-Nitride Heterostructures
Spontaneous and Piezoelectric Polarization Effects
Spectral Diffusion in Quantum Dots
Photon Linewidths
Optically Pumped Versus Electrically Pumped Quantum Emitters
Photon Detection Properties
10 Polaritons in Nitride Semiconductor Heterostructures
Strong Coupling between Excitons and Cavity Modes
Conditions for Strong Coupling
Energies of Polariton Modes
Characterization of Polariton Modes
Polaritonic Lasing versus Photonic Lasing
Exciton Binding Energies and Polaritonic Lasing
Spontaneous and Piezoelectric Polarization Effects
Optically Pumped versus Electrically Pumped Polariton Lasers
Inhomogeneous Broadening in Polaritonic Lasing
Polariton Lasing in Quantum Heterostructure Nanocavities
11 Plasmon-coupled Group III-Nitride Optoelectronic Devices
Coupling between Localized Surface Plasmons (LSPs) and Quantum Wells
LEDs and Lasers Based on LSPR Coupling
Biosensing Schemes Based on LSPR/QW Coupling
InGaN QW Substrates for Surface-enhanced Raman Scattering (SERS) Extended Hotspots
InGaN Nanorods Plus Metal NPs for Water Splitting Using SPR Effects
InGaN QDs Plus Metal NPs for Water Splitting Using SPR Effects
12 Photonic Integrated Circuits Using Group III-Nitride Semiconductors
Indium Gallium Nitride (InGaN)-based Monolithic Photonic Chips
Photonic Integrated Circuits with Plasmonic Components
Exploring Modulators Using Nitrides for Easier Integration
Combining Photonic and Electronic Components on the Same Chip
Monolithically Integrated Multi-color LED Display on a Single Chip
13 Conclusion
Index
EULA